![]() ![]() The collector current Ic increase slightly with an increase in the voltage V CE, if I B is increased. The BE junction is forward bias and CB junction is reverse bias. ![]() ![]() Hence it is equivalent to an open circuit. In this region, BJT offers large resistance to the flow of current. The region below the characteristic for I B =0 is cut-off region. The base current I B =0 and collector current I C is equal to the reverse leakage current I CEO. The BE and CB both junctions are reverse bias. The I-V characteristic of BJT divides into four regions. Sometimes, heat sink is used to increase effective area and therefore increase power dissipation capacity.įigure 2. So, they have to dissipate power in the form of heat. The power handling capacity of this transistor is very large. The width of this layer decides the breakdown voltage. The drift layer (n-) increase the voltage blocking capacity of the transistor due to the low doping level. The last layer is a highly doped collector region (n+). The third region is lightly doped collector drift region (n-). The second layer is moderately doped the base layer (p). The first layer is a heavily doped emitter layer (n+). The vertical structure uses to increase the cross-sectional area. It has a vertically oriented four-layers structure. There are two basic types of transistors, the bipolar junction transistor, or BJT, and the field-effect transistor, or FET.īJT has three terminals Collector (C), Emitter (E) and Base (B). Its ability to amplify the signal or to switch high power loads using a small signal makes it useful in the field of electronics. A transistor is an electronic device that can be used as an amplifier or electronic switch. ![]()
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